Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers
Author(s): Yuan, Y (Yuan Ye); Su, XB (Su Xiang-Bin); Yang, CA (Yang Cheng-ao); Zhang, Y (Zhang Yi); Shang, JM (Shang Jin-Ming); Xie, SW (Xie Sheng-Wen); Zhang, Y (Zhang Yu); Ni, HQ (Ni Hai-Qiao); Xu, YQ (Xu Ying-Qiang); Nil, ZC (Nil Zhi-Chuan)
Source: JOURNAL OF INFRARED AND MILLIMETER WAVES Volume: 39 Issue: 6 Pages: 667-670 DOI: 10.11972/j.issn.1001-9014.2020.06.001 Published: DEC 2020
Abstract: GaAs-based 1. 3 mu m InAs quantum dot laser have been grown by MBE system. Under the optimized InAs quantum dots growth temperature of 520.,and the methods of Be-doping in the active region are adopted for better device performance. With a ridge width of 100 mu m and cavity length of 2 mm,the maximum output power of single facet without coating has reached up to 1008 mW under continuous wave(CW)operation at room temperature,and the threshold current density is 110 A/cm(2). The QD lasers can still operate at continuous waves (CW)up to 80 degrees C,and the characteristic temperature below 50 degrees C is as high as 405 K.
Accession Number: WOS:000603449000001