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Robust anomalous Hall effect and temperature-driven Lifshitz transition in Weyl semimetal Mn3Ge

2021-02-25

 

Author(s): Wang, XL (Wang, Xiaolei); Pan, D (Pan, Dong); Zeng, QQ (Zeng, Qingqi); Chen, X (Chen, Xue); Wang, HL (Wang, Hailong); Zhao, D (Zhao, Duo); Xu, ZY (Xu, Zhiyang); Yang, QN (Yang, Qianqian); Deng, JX (Deng, Jinxiang); Zhai, TR (Zhai, Tianrui); Wu, GH (Wu, Guangheng); Liu, EK (Liu, Enke); Zhao, JH (Zhao, Jianhua)

Source: NANOSCALE Volume: 13 Issue: 4 Pages: 2601-2608 DOI: 10.1039/d0nr07946d Published: JAN 28 2021

Abstract: Topological Weyl semimetals have attracted considerable interest because they manifest underlying physics and device potential in spintronics. Large anomalous Hall effect (AHE) in non-collinear antiferromagnets (AFMs) represents a striking Weyl phase, which is associated with Bloch-band topological features. In this work, we report robust AHE and Lifshitz transition in high-quality Weyl semimetal Mn3Ge thin film, comprising stacked Kagome lattice and chiral antiferromagnetism. We successfully achieved giant AHE in our Mn3Ge film, with a strong Berry curvature enhanced by the Weyl phase. The enormous coercive field H-C in our AHE curve at 5 K reached an unprecedented 5.3 T among hexagonal Mn3X systems. Our results provide direct experimental evidence of an electronic topological transition in the chiral AFMs. The temperature was demonstrated to play an efficient role in tuning the carrier concentration, which could be quantitatively determined by the two-band model. The electronic band structure crosses the Fermi energy level and leads to the reversal of carrier type around 50 K. The results not only offer new functionality for effectively modulating the Fermi level location in topological Weyl semimetals but also present a promising route of manipulating the carrier concentration in antiferromagnetic spintronic devices.

Accession Number: WOS:000614867500040

PubMed ID: 33481982

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Wang, Xiaolei                  0000-0002-6964-2453

Pan, Dong                  0000-0003-2067-6983

ISSN: 2040-3364

eISSN: 2040-3372

Full Text: https://pubs.rsc.org/en/content/articlelanding/2021/NR/D0NR07946D#!divAbstract



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